inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon pnp power transistors D45VH series description low saturation voltage fast switching speed complement to type d44vh series applications designed for high-speed switching applications, such as switching regulators and high frequency inverters. they are also well-suited for drivers for high power switching circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage D45VH 1 -50 v D45VH 4 -70 D45VH 7 -80 D45VH 10 -100 v ceo collector-emitter voltage D45VH 1 -30 v D45VH 4 -45 D45VH 7 -60 D45VH 10 -80 v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i cm collector current-peak -20 a p c collector power dissipation @t c =25 83 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon pnp power transistors D45VH series electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage D45VH 1 i c = -25ma ;i b = 0 -30 v D45VH 4 -45 D45VH 7 -60 D45VH 10 -80 v ce (sat)-1 collector-emitter saturation voltage i c = -8a ;i b = -0.8a -1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = -15a ;i b = -3a;t c =100 -1.5 v v be (sat) base-emitter saturation voltage i c = -8a ;i b = -0.8a i c = -8a ;i b = -0.8a;t c =100 -1.0 -1.5 v i cev collector cutoff current v ce =ratedv ce ;v be( off ) =-4v v ce =ratedv ce ;v be( off ) =-4v;t c =100 -10 -100 a i ebo emitter cutoff current v eb = -7v; i c = 0 -10 a h fe-1 dc current gain i c = -2a ; v ce = -1v 35 h fe-2 dc current gain i c = -4a ; v ce = -1v 20 c ob output capacitance i e = 0;v cb = -10v,f test = 1.0mhz 275 pf f t current-gainbandwidth product i c = 0.1a;v ce = -10v;f test = 20mhz 50 mhz switching times t d delay time i c = -8a; i b1 = -i b2 = -0.8a v cc = -20v 50 ns t r rise time 250 ns t s storage time 700 ns t f fall time 90 ns
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